Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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==Dope with boron== | ==Dope with boron== | ||
The furnace | The furnace A1 Boron Drive-in and Pre-dep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers. | ||
The concentration of boron in the wafer depends on the process temperature. | The concentration of boron in the wafer depends on the process temperature. | ||
The depth profile depends of the process time. | The depth profile depends of the process time. | ||
All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done with the temperature at 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>. | |||
<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | <gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | ||
image:borprofil_1tim.jpg|1 hour | image:borprofil_1tim.jpg|1 hour | ||
image:borprofil_6tim.jpg|6 hours | image:borprofil_6tim.jpg|6 hours | ||
image:borprofil_16tim.jpg|16 hours | image:borprofil_16tim.jpg|16 hours | ||
</gallery> | </gallery> | ||
<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | <gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | ||
image:borDiffusionDepthtable.jpg | image:borDiffusionDepthtable.jpg | ||
image:borDiffusionDepthplot.jpg | image:borDiffusionDepthplot.jpg | ||