Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | <gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | ||
image:borprofil_1tim.jpg|1 hour | image:borprofil_1tim.jpg|1 hour, Temp=1125 <sup>o</sup>C | ||
image:borprofil_6tim.jpg|6 hours | image:borprofil_6tim.jpg|6 hours, Temp=1125 <sup>o</sup>C | ||
image:borprofil_16tim.jpg|16 hours | image:borprofil_16tim.jpg|16 hours, Temp=1125 <sup>o</sup>C | ||
</gallery> | </gallery> | ||
<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | <gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | ||
image:borDiffusionDepthtable.jpg | image:borDiffusionDepthtable.jpg | ||
image:borDiffusionDepthplot.jpg | image:borDiffusionDepthplot.jpg | ||
Revision as of 12:26, 25 June 2014
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Dope with boron
The furnace A2 boron predep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.
The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time.
- Boron profiles from SIMS
-
1 hour, Temp=1125 oC -
6 hours, Temp=1125 oC -
16 hours, Temp=1125 oC
<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> image:borDiffusionDepthtable.jpg image:borDiffusionDepthplot.jpg