Specific Process Knowledge/Lithography/CSAR: Difference between revisions

Revision as of 15:01, 16 June 2014

These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.

Process Flow

Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).

Equipment	Process Parameters	Comments	Initials and date
Pretreatment
4" Si wafers	No Pretreatment		TIGRE, 08-04-2014
Spin Coat
Spin Coater Manual, LabSpin, A-5	AR-P 6200/2 AllResist E-beam resist 60 sec at various spin speed. Acceleration 4000 s-2, softbake 2 - 5 min at 150 deg Celcius	Resist poured directly from bottle	TIGRE, 09-04-2014, 16-06-2014
Characterization
Ellipsometer VASE B-1	9 points measured on 100 mm wafer	ZEP program used; measured at 70 deg only	TIGRE, 09-04-2014
E-beam Exposure
JEOL 9500 E-beam writer, E-1	Dosepattern 14nm - 100nm, dose 120-280 muC/cm2	Virtual chip mark height detection	TIGRE, 10-04-2014
Development
Fumehood, D-3	60 sec in X AR 600-54/6, 60 sec rinse in IPA, N2 Blow dry	Agitation (by hand) while developing	TIGRE, 10-04-2014
Characterization
Zeiss SEM Supra 60VP, D-3			TIGRE, ??-04-2014

Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
2000	4000	225.98	0.97
3000	4000	194.00	0.6
4000	4000	169.57	0.32
5000	4000	151.47	0.26
6000	4000	142.38	0.41
7000	4000	126.59	0.36

AllResist CSAR on Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
3000	4000	201.61	1.20
4000	4000	173.89	0.64
5000	4000	155.91	0.65

AllResist CSAR 1:1 in anisole, Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
2000	4000	83.48	0.49
3000	4000	67.12	0.41
4000	4000	58.64	0.44
5000	4000	53.13	0.39
6000	4000	48.76	0.38

Revision as of 15:01, 16 June 2014 view source Tigre (talk \| contribs) DCH-Employees-701 2,257 edits →‎Spin Curve ← Older edit		Revision as of 15:01, 16 June 2014 view source Tigre (talk \| contribs) DCH-Employees-701 2,257 edits →‎Spin Curve Newer edit →
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	[[File:SpinCurveCSAR.jpg\|right\|~~500px~~]]		[[File:SpinCurveCSAR.jpg\|right\|600px]]

	The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.		The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.