Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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*Wet anneal with H2O in a bubbler is used for ? and can be done in furnaces:C1,C2,C3. | *Wet anneal with H2O in a bubbler is used for ? and can be done in furnaces:C1,C2,C3. | ||
==Comparing the | ==Comparing the seven annealing equipments== | ||
{| {{table}} border="1" cellspacing="0" cellpadding="8" | {| {{table}} border="1" cellspacing="0" cellpadding="8" | ||
| align="center" style="background:#f0f0f0;"|'''''' | | align="center" style="background:#f0f0f0;"|'''''' | ||
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| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | | align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | ||
| align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium''' | | align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium''' | ||
| align="center" style="background:#f0f0f0;"|'''Nobel furnace''' | |||
| align="center" style="background:#f0f0f0;"|'''RTP''' | |||
|- | |- | ||
! General description | ! General description | ||
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Annealing and oxidation of wafers from the B-stack and PECVD1.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium on. | |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Annealing and oxidation of wafers from the B-stack and PECVD1.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium on.|||| | ||
|- | |- | ||
! Dry annealing | ! Dry annealing | ||
|x||x||x (with special permission)||x||x||x | |x||x||x (with special permission)||x||x||x||x||x | ||
|- | |- | ||
!Wet annealing with bubler (water steam + N2) | !Wet annealing with bubler (water steam + N2) | ||
|||||x (with special permission)||x||x|| | |||||x (with special permission)||x||x|||||| | ||
|- | |- | ||
!Process temperature | !Process temperature | ||
|800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C | |800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150<sup>o</sup>C||? | ||
|- | |- | ||
! Batch size | ! Batch size | ||
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers | |max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||?||? | ||
|- | |- | ||
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace: | !style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace: | ||
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| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | | align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | ||
| align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium''' | | align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium''' | ||
| align="center" style="background:#f0f0f0;"|'''Nobel furnace''' | |||
| align="center" style="background:#f0f0f0;"|'''RTP''' | |||
|- | |- | ||
| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x | | New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x||x||x | ||
|- | |- | ||
| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||x | | RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||x||x||x | ||
|- | |- | ||
| From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4|||||||| | | From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4|||||||||||| | ||
|- | |- | ||
| Wafers directly from PECVD1||||||||x||x||x | | Wafers directly from PECVD1||||||||x||x||x||x||x | ||
|- | |- | ||
| Wafers directly from NIL bonding||||||||||x||x | | Wafers directly from NIL bonding||||||||||x||x||x||x | ||
|- | |- | ||
|Wafers with aluminium on||||||||||||x | |Wafers with aluminium on||||||||||||x||x||x | ||
|- | |||
|wafers with other metals||||||||||||||x||x | |||
|- | |||
|wafers with III-V materials||||||||||||||||x | |||
|- | |- | ||
|} | |} | ||
Revision as of 14:33, 25 January 2008
Annealing
At Danchip we have seven furnaces and an RTP for annealing: A1,A3,C1,C2,C3,C4 noble furnace and RTP. Annealing can take place either by a dry process or a wet process. In a wet annealing you will also get some oxidation.
- Dry anneal is used for ? and can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
- Wet anneal with H2O in a bubbler is used for ? and can be done in furnaces:C1,C2,C3.
Comparing the seven annealing equipments
| ' | A1 Boron drive-in | A3 Phosphorous drive-in | C1 Gate oxide | C2 Anneal oxide | C3 Anneal bond | C4 Anneal aluminium | Nobel furnace | RTP |
| General description | Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation. | Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation. | Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers. | Annealing and oxidation of wafers from the B-stack and PECVD1. | Annealing and oxidation of wafers from NIL. | Annealing of wafers with aluminium on. | ||
|---|---|---|---|---|---|---|---|---|
| Dry annealing | x | x | x (with special permission) | x | x | x | x | x |
| Wet annealing with bubler (water steam + N2) | x (with special permission) | x | x | |||||
| Process temperature | 800-1150 oC | 800-1150 oC | 800-1150 oC | 800-1150 oC | 800-1150 oC | 800-1150 oC | 800-1150oC | ? |
| Batch size | max. 30 wafers of 4" or 2" | max. 30 4" wafers or 2" wafers | max. 30 wafers of 6",4" or 2" | max. 30 4" wafers or 2" wafers | max. 30 4" wafers or 2" wafers | max. 30 4" wafers or 2" wafers | ? | ? |
| Which wafers are allowed to enter the furnace: | A1 Boron drive-in | A3 Phosphorous drive-in | C1 Gate oxide | C2 Anneal oxide | C3 Anneal bond | C4 Anneal aluminium | Nobel furnace | RTP |
| New clean* Si wafers 4" (6" in C1) | x | x | x (with special permission) | x | x | x | x | x |
| RCA clean** Si wafers with no history of Metals on | x | x | x (with special permission) | x | x | x | x | x |
| From Predep furnace directly (e.g. incl. Predep HF**) | From A2 | From A4 | ||||||
| Wafers directly from PECVD1 | x | x | x | x | x | |||
| Wafers directly from NIL bonding | x | x | x | x | ||||
| Wafers with aluminium on | x | x | x | |||||
| wafers with other metals | x | x | ||||||
| wafers with III-V materials | x |
*New clean: only right from the new clean box. It is not allowed to put them in another box first.
**These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.