Specific Process Knowledge/Lithography: Difference between revisions
Appearance
| Line 52: | Line 52: | ||
| | | | ||
*UV sensitive: | *UV sensitive: | ||
**AZ 5214E, AZ 4562 | **AZ 5214E, AZ 4562, AZ MiR 701 (positive) | ||
**AZ | **AZ 5214E, AZ nLOF 2020, SU-8 (negative) | ||
| | | | ||
*DUV sensitive | *DUV sensitive | ||
**JSR KRF M230Y | **JSR KRF M230Y, JSR KRF M35G (positive) | ||
** | **UVN2300-0.8 (negative) | ||
| | | | ||
*E-beam sensitive | *E-beam sensitive | ||
Revision as of 08:02, 12 June 2014

Feedback to this page: click here
Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
|---|---|---|---|---|---|
| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Pattern transfer via electron beam | Pattern transfer via hot embossing(HE) | Pattern transfer via direct writing |
| Pattern size range |
|
|
|
|
|
| Resist type |
|
|
|
|
|
| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
|
|
We have cassettes that fit to
Only one cassette can be loaded at time |
|
|
| Allowed materials |
|
|
|
|
|
Equipment Pages