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Specific Process Knowledge/Lithography/ZEP520A: Difference between revisions

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The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on a Si wafer with native oxide. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on a Si wafer with native oxide. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.


{|class="wikitable" border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 40%"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 40%"
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