Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
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Concentrated H<sub>2</sub>SO<sub>4</sub>(96%) is a selective etch of InP with a very low etch rate in InGaAsP. | Concentrated H<sub>2</sub>SO<sub>4</sub>(96%) is a selective etch of InP with a very low etch rate in InGaAsP. | ||
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