Specific Process Knowledge/Lithography/Strip: Difference between revisions
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At a load at 2 Fused silica wafers resist removed 0.01-01,5um | At a load at 2 Fused silica wafers resist removed 0.01-01,5um | ||
==Plasma | ==Plasma asher== | ||
[[Image:plasmaasher2.JPG|300x300px|thumb|The | [[Image:plasmaasher2.JPG|300x300px|thumb|The Plasma asher is placed in C-1]] | ||
The Plasma | '''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_asher click here]''' | ||
The Plasma asher (300 auto load model) can be used for the following process: | |||
*Photoresist stripping | *Photoresist stripping | ||
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The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip. | The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip. | ||
'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager]''' | |||
===Process Information=== | ===Process Information=== | ||
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]] | *[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]] | ||
==Plasma Asher 2== | ==Plasma Asher 2== | ||