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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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==Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride PECVD1 has been decommissioned==
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|1nitride
|30
|20
|1000
|500
|80
|
|-
|1nit_std
|40
|20
|1960
|550
|60
|Process control recipe
|-
|}
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress [MPa]
|BHF etch rate [Å/min]
|Comments
|-
|1nitride
|
|
|
|
|
|
|-
|1nit_std
|~32
|1.89
|~1
|
|~700
|The latest measured values can be seen in the process control sheet in LabManager
|-
|-
|}
|}

Revision as of 10:12, 6 May 2014

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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
1nitride 30 20 1000 500 80
1nit_std 40 20 1960 550 60 Process control recipe

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%] Stress [MPa] BHF etch rate [Å/min] Comments
1nitride
1nit_std ~32 1.89 ~1 ~700 The latest measured values can be seen in the process control sheet in LabManager



Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Quality Controle (QC) for PECVD3
QC Recipe: QCNITRIDE
SiH4 flow 30 sccm
NH3 flow 30 sccm
N2 flow 1470 sccm
Pressure 650 mTorr
RF-power
  • LF: 20 W 2s
  • HF: 20 W 6s
QC limits PECVD3
Depoition rate 10.4 - 13.0 nm/min
Non-uniformity <2.0 %
Refractive Index 1.909 - 2.028


Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
MFSiNLS 30 30 1470 650 20HF 6s

20LF 2s

Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager.
LFSiN 30 15 1470 550 60LF Compressive stress
HFSiN 30 42 1470 900 20HF Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name Deposition rate [Å/min] RI Uniformity [%]
[Std./mean] 		Stress [MPa] KOH etch rate [Å/min] BHF etch rate [Å/min]
MFSiNLS ~107 ~1.99 ~4 ~-30 ~2.5 ~250
LFSiN ~550 ~1.96 ~3 ~-630 . .
HFSiN ~130 ~1.97 ~2 ~460 . .


Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride PECVD1 has been decommissioned

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
1nitride 30 20 1000 500 80
1nit_std 40 20 1960 550 60 Process control recipe

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%] Stress [MPa] BHF etch rate [Å/min] Comments
1nitride
1nit_std ~32 1.89 ~1 ~700 The latest measured values can be seen in the process control sheet in LabManager
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