Specific Process Knowledge/Lithography/ZEP520A: Difference between revisions

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!colspan="7"|AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 23-04-2014
!colspan="7"|ZEON ZEP520A1:1 in anisole spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 23-04-2014
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Revision as of 11:50, 23 April 2014

These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.


Process Flow

Test of ZEP resist; a positive e-beam resist from ZEON.

Equipment Process Parameters Comments Initials and date
Pretreatment
4" Si wafers No Pretreatment TIGRE, 23-04-2014
Spin Coat
Spin Coater Manual, LabSpin, A-5 ZEP520A 1:1 E-beam resist

60 sec at various spin speed. Acceleration 4000 s-2, softbake 2 min at 180 deg Celcius

Resist poured directly from bottle TIGRE, 23-04-2014
Characterization
Ellipsometer VASE B-1 9 points measured on 100 mm wafer ZEP program used; measured at 70 deg only TIGRE, 23-04-2014
E-beam Exposure
JEOL 9500 E-beam writer, E-1 Dosepattern 14nm - 100nm,

dose 120-280 muC/cm2

Virtual chip mark height detection TIGRE, 23-04-2014
Development
Fumehood, D-3 60 sec in ,

60 sec rinse in IPA, N2 Blow dry

Agitation (by hand) while developing TIGRE, XX-04-2014
Characterization
Zeiss SEM Supra 60VP, D-3 TIGRE, ??-04-2014

Spin Curve

This spin curve data performed with ZEP520A1:1 bottle opened 13-01-2014 (i.e. approximately 3 month old).


The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

ZEON ZEP520A1:1 in anisole spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 23-04-2014
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
3000 4000
4000 4000
5000 4000