Specific Process Knowledge/Lithography/ZEP520A: Difference between revisions

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Created page with "These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe..."
 
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== Process Flow ==
== Process Flow ==
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).
Test of ZEP resist; a positive e-beam resist from ZEON.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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|No Pretreatment
|No Pretreatment
|
|
|TIGRE, 08-04-2014
|TIGRE, 23-04-2014
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|Spin Coater Manual, LabSpin, A-5
|AR-P 6200/2 AllResist E-beam resist
|ZEP520A 1:1 E-beam resist
60 sec at various spin speed.
60 sec at various spin speed.
Acceleration 4000 s-2,  
Acceleration 4000 s-2,  
softbake 5 min at 150 deg Celcius
softbake 2 min at 180 deg Celcius
|Resist poured directly from bottle
|Resist poured directly from bottle
|TIGRE, 09-04-2014
|TIGRE, 23-04-2014
|-
|-


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|9 points measured on 100 mm wafer
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|ZEP program used; measured at 70 deg only
|TIGRE, 09-04-2014
|TIGRE, 23-04-2014
|-
|-


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dose 120-280 muC/cm2
dose 120-280 muC/cm2
|Virtual chip mark height detection
|Virtual chip mark height detection
| TIGRE, 10-04-2014
| TIGRE, 23-04-2014
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|Fumehood, D-3
|60 sec in X AR 600-54/6,  
|60 sec in ,  
60 sec rinse in IPA,  
60 sec rinse in IPA,  
N2 Blow dry
N2 Blow dry
|Agitation (by hand) while developing
|Agitation (by hand) while developing
| TIGRE, 10-04-2014
| TIGRE, XX-04-2014
|-
|-


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|}
|}


== Spin Curve ==
== Spin Curve ==

Revision as of 11:42, 23 April 2014

These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.


Process Flow

Test of ZEP resist; a positive e-beam resist from ZEON.

Equipment Process Parameters Comments Initials and date
Pretreatment
4" Si wafers No Pretreatment TIGRE, 23-04-2014
Spin Coat
Spin Coater Manual, LabSpin, A-5 ZEP520A 1:1 E-beam resist

60 sec at various spin speed. Acceleration 4000 s-2, softbake 2 min at 180 deg Celcius

Resist poured directly from bottle TIGRE, 23-04-2014
Characterization
Ellipsometer VASE B-1 9 points measured on 100 mm wafer ZEP program used; measured at 70 deg only TIGRE, 23-04-2014
E-beam Exposure
JEOL 9500 E-beam writer, E-1 Dosepattern 14nm - 100nm,

dose 120-280 muC/cm2

Virtual chip mark height detection TIGRE, 23-04-2014
Development
Fumehood, D-3 60 sec in ,

60 sec rinse in IPA, N2 Blow dry

Agitation (by hand) while developing TIGRE, XX-04-2014
Characterization
Zeiss SEM Supra 60VP, D-3 TIGRE, ??-04-2014

Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 4000 225.98 0.97
3000 4000 194.00 0.6
4000 4000 169.57 0.32
5000 4000 151.47 0.26
6000 4000 142.38 0.41
7000 4000 126.59 0.36