Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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[[File:SpinCurveCSAR.jpg|right|500px]]
[[File:SpinCurveCSAR.jpg|frame|right|200px]]

Revision as of 08:17, 11 April 2014

These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.


Process Flow

Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).

Equipment Process Parameters Comments Initials and date
Pretreatment
Si wafers No Pretreatment TIGRE, 08-04-2014
Spin Coat
Spin Coater Manual, LabSpin, A-5 AR-P 6200/2 AllResist E-beam resist

60 sec at various spin speed. Acceleration 4000 s-2, softbake 5 min at 150 deg Celcius

Resist poured directly from bottle TIGRE, 09-04-2014
Characterization
Ellipsometer VASE B-1 9 points measured on 100 mm wafer ZEP program used; measured at 70 deg only TIGRE, 09-04-2014
E-beam Exposure
JEOL 9500 E-beam writer, E-1 Dosepattern 14nm - 100nm,

dose 120-280 muC/cm2

Virtual chip mark height detection TIGRE, 10-04-2014
Development
Fumehood, D-3 60 sec in X AR 600-54/6,

60 sec rinse in IPA, N2 Blow dry

Agitation (by hand) while developing TIGRE, 10-04-2014
Characterization
Zeiss SEM Supra 60VP, D-3 TIGRE, ??-04-2014


Spin Curve

AllResist AR-P 6200/2 spinning on Manual Spinner LabSpin A-5, TIGRE, 09-04-2014
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 4000 225.98 0.97
3000 4000 194.00 0.6
4000 4000 169.57 0.32
5000 4000 151.47 0.26
6000 4000 142.38 0.41
7000 4000 126.59 0.36