Specific Process Knowledge/Lithography/CSAR: Difference between revisions

Revision as of 15:02, 10 April 2014

These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.

Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).

Equipment	Process Parameters	Comments	Initials and date
Spin Coat of AllResist AR-P 6200-2
Spin Coater Manual, LabSpin, A-5	60 sec at various spin speed. Acceleration 4000 s-2, softbake 5 min at 150 deg Celcius	Resist poured directly from bottle	TIGRE, 09-04-2014
Characterization
Ellipsometer VASE B-1	9 points measured on 100 mm wafer	ZEP program used; measured at 70 deg only	TIGRE, 09-04-2014
E-beam Exposure
JEOL 9500 E-beam writer, E-1	Dosepattern 14nm - 100nm, dose 120-280 muC/cm2	Virtual chip mark height detection	TIGRE, 10-04-2014
Development
Fumehood, D-3	60 sec in X AR 600-54/6, 60 sec rinse in IPA, N2 Blow dry	Agitation (by hand) while developing	TIGRE, 10-04-2014
Characterization
Zeiss SEM Supra 60VP, D-3			TIGRE, ??-04-2014

AllResist AR-P 6200/2 spinning on Manual Spinner LabSpin A-5, TIGRE, 09-04-2014
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
2000	4000	225.98	0.97
3000	4000	194.00	0.6
4000	4000	169.57	0.32
5000	4000	151.47	0.26
6000	4000	142.38	0.41
7000	4000	126.59	0.36

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-!colspan="7"|AllResist SX 6200/2 spinning on Manual Spinner LabSpin A-5, TIGRE, 09-04-2014
+!colspan="7"|AllResist AR-P 6200/2 spinning on Manual Spinner LabSpin A-5, TIGRE, 09-04-2014
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