Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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Revision as of 14:59, 10 April 2014
These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).
| Equipment | Process Parameters | Comments | Initials and date |
|---|---|---|---|
| Spin Coat of AllResist AR-P 6200-2 | |||
| Spin Coater Manual, LabSpin, A-5 | 60 sec at various spin speed. Acceleration 4000 s-2, softbake 5 min at 150 deg Celcius | Resist poured directly from bottle | TIGRE, 09-04-2014 |
| Characterization | |||
| Ellipsometer VASE B-1 | 9 points measured on 100 mm wafer | ZEP program used; measured at 70 deg only | TIGRE, 09-04-2014 |
| E-beam Exposure | |||
| JEOL 9500 E-beam writer, E-1 | Dosepattern 14nm - 100nm, dose 120-280 muC/cm2 | Virtual chip mark height detection | TIGRE, 10-04-2014 |
| Development | |||
| Fumehood, D-3 | 60 sec in X AR 600-54/6, 60 sec rinse in IPA, N2 Blow dry | Agitation (by hand) while developing | TIGRE, 10-04-2014 |
| Characterization | |||
| Zeiss SEM Supra 60VP, D-3 | TIGRE, ??-04-2014 | ||
| AllResist SX 6200/2 spinning on Manual Spinner LabSpin A-5, TIGRE, 09-04-2014 | ||||||
|---|---|---|---|---|---|---|
| Spin Speed [rpm] | Acceleration [1/s2] | Thickness [nm] | St Dev | |||
| 2000 | 4000 | |||||
| 3000 | 4000 | |||||
| 4000 | 4000 | |||||
| 5000 | 4000 | |||||
| 6000 | 4000 | |||||
| 7000 | 4000 | |||||