Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk. | |||
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2). | Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2). | ||
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!Process Parameters | !Process Parameters | ||
!Comments | !Comments | ||
!Initials and date | |||
|- | |- | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!colspan=" | !colspan="4"|Spin Coat of AllResist AR-P 6200-2 | ||
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|60 sec at various spin speed. Acceleration 4000 s-2, softbake 5 min at 150 deg Celcius | |60 sec at various spin speed. Acceleration 4000 s-2, softbake 5 min at 150 deg Celcius | ||
|Resist poured directly from bottle | |Resist poured directly from bottle | ||
|TIGRE, 09-04-2014 | |||
|- | |- | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!colspan=" | !colspan="4"|Characterization | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|Ellipsometer VASE B-1 | |Ellipsometer VASE B-1 | ||
|9 points measured on 100 mm wafer | |||
|ZEP program used; measured at 70 deg only | |ZEP program used; measured at 70 deg only | ||
| | |TIGRE, 09-04-2014 | ||
|- | |- | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!colspan=" | !colspan="4"|E-beam Exposure, | ||
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|Dosepattern 14nm - 100nm, dose 120-280 muC/cm2 | |Dosepattern 14nm - 100nm, dose 120-280 muC/cm2 | ||
|Virtual chip mark height detection | |Virtual chip mark height detection | ||
| TIGRE, 10-04-2014 | |||
|- | |- | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!colspan=" | !colspan="4"|Development, | ||
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|60 sec in X AR 600-54/6, 60 sec rinse in IPA, N2 Blow dry | |60 sec in X AR 600-54/6, 60 sec rinse in IPA, N2 Blow dry | ||
|Agitation (by hand) while developing | |Agitation (by hand) while developing | ||
| TIGRE, 10-04-2014 | |||
|- | |- | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!colspan=" | !colspan="4"|Characterization, | ||
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| TIGRE, ??-04-2014 | |||
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Revision as of 14:57, 10 April 2014
These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).
Equipment | Process Parameters | Comments | Initials and date |
---|---|---|---|
Spin Coat of AllResist AR-P 6200-2 | |||
Spin Coater Manual, LabSpin, A-5 | 60 sec at various spin speed. Acceleration 4000 s-2, softbake 5 min at 150 deg Celcius | Resist poured directly from bottle | TIGRE, 09-04-2014 |
Characterization | |||
Ellipsometer VASE B-1 | 9 points measured on 100 mm wafer | ZEP program used; measured at 70 deg only | TIGRE, 09-04-2014 |
E-beam Exposure, | |||
JEOL 9500 E-beam writer, E-1 | Dosepattern 14nm - 100nm, dose 120-280 muC/cm2 | Virtual chip mark height detection | TIGRE, 10-04-2014 |
Development, | |||
Fumehood, D-3 | 60 sec in X AR 600-54/6, 60 sec rinse in IPA, N2 Blow dry | Agitation (by hand) while developing | TIGRE, 10-04-2014 |
Characterization, | |||
Zeiss SEM Supra 60VP, D-3 | TIGRE, ??-04-2014 |
AllResist SX 6200/2 spinning on Manual Spinner LabSpin A-5, TIGRE, 09-04-2014 | ||||||
---|---|---|---|---|---|---|
Spin Speed [rpm] | Acceleration [1/s2] | Thickness [nm] | St Dev | |||
2000 | 4000 | |||||
3000 | 4000 | |||||
4000 | 4000 | |||||
5000 | 4000 | |||||
6000 | 4000 | |||||
7000 | 4000 |