Specific Process Knowledge/Thin film deposition: Difference between revisions

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*[[/Furnace LPCVD PolySilicon|Furnace LPCVD Polysilicon (4" and 6")]] ''Deposition of polysilicon''
*[[/Furnace LPCVD PolySilicon|Furnace LPCVD Polysilicon (4" and 6")]] ''Deposition of polysilicon''
*[[/Furnace LPCVD TEOS|Furnace LPCVD TEOS (4")]] - ''Deposition of silicon oxide''
*[[/Furnace LPCVD TEOS|Furnace LPCVD TEOS (4")]] - ''Deposition of silicon oxide''
*[[/Furnace LPCVD Nitride|nitrid test]]
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*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
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*[[/MVD|MVD]] - ''Molecular Vapor Deposition''
*[[/MVD|MVD]] - ''Molecular Vapor Deposition''
*[[/Electroplating-Ni|Electroplating-Ni]] - ''Electrochemical deposition of nickel''
*[[/Electroplating-Ni|Electroplating-Ni]] - ''Electrochemical deposition of nickel''
*[[/Furnace LPCVD Nitride|nitrid test]]
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Revision as of 14:39, 9 April 2014

3rd Level - Material/Method

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Choose material to deposit

Dielectrica Semicondutors Metals Alloys Polymers

Silicon Nitride - and oxynitride
Silicon Oxide
Titanium Oxide

Silicon
Germanium

Aluminium
Titanium
Chromium
Nickel
Copper
Molybdenum
Palladium
Silver
Tin
Tantalum
Tungsten
Platinum
Gold

TiW alloy (10%/90% by weight)
NiCr alloy
AlTi alloy
NiV alloy

SU8
Antistiction coating
Topas
PMMA


Choose deposition equipment

PVD LPCVD PECVD ALD Coaters Others


See the Lithography/Coaters page for coating polymers