Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
| Line 39: | Line 39: | ||
|Plasma Enhanced Chemical Vapor Deposition has the advantach that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature. | |Plasma Enhanced Chemical Vapor Deposition has the advantach that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature. | ||
|Sputter deposition: can be done ontop of a large range of materials | |Sputter deposition: can be done ontop of a large range of materials | ||
|Sputter deposition: can be done ontop of a large range of materials | |Sputter deposition: can be done ontop of a large range of materials. This system can only run in depostion mode in certain periods. | ||
|Sputter deposition: can be done ontop of a large range of materials | |Sputter deposition: can be done ontop of a large range of materials | ||
|- | |- | ||