Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
No edit summary |
|||
Line 2: | Line 2: | ||
PolySilicon can be deposited in several Danchip tools. Either it can be sputtered or be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methods: | |||
==Deposition of PolySilicon using LPCVD== | ==Deposition of PolySilicon using LPCVD== | ||
Line 11: | Line 11: | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_4%22_polysilicon_furnace|Deposition of polysilicon using the 4" polysilicon furnace]] | *[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_4%22_polysilicon_furnace|Deposition of polysilicon using the 4" polysilicon furnace]] | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_6%22_polysilicon_furnace|Deposition of polysilicon using the 6" polysilicon furnace]] | *[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_6%22_polysilicon_furnace|Deposition of polysilicon using the 6" polysilicon furnace]] | ||
==Deposition of Silicon using sputter deposition technique== | ==Deposition of Silicon using sputter deposition technique== | ||
Line 20: | Line 21: | ||
* [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|Si sputter in PVD co-sputter/evaporation]] | * [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|Si sputter in PVD co-sputter/evaporation]] | ||
* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter Alcatel|Si sputter in Alcatel]] | * [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter Alcatel|Si sputter in Alcatel]] | ||
==Comparison of the methods for deposition of Silicon== | ==Comparison of the methods for deposition of Silicon== |
Revision as of 14:18, 3 April 2014
Feedback to this page: click here
PolySilicon can be deposited in several Danchip tools. Either it can be sputtered or be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methods:
Deposition of PolySilicon using LPCVD
Danchip has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) polysilicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively.
- Deposition of polysilicon using the 4" polysilicon furnace
- Deposition of polysilicon using the 6" polysilicon furnace
Deposition of Silicon using sputter deposition technique
At DANCHIP you can also deposit silicon using Wordentec, PVD co-sputter/evaporation or IBE Ionfab300 sputter systems. (There is also a Si sputter target in Alcatel, but the process is not running stable nowadays). One of the advantages here is that you can deposit on any material you like.
- Si deposition in IBE⁄IBSD Ionfab300
- Si sputter in Wordentec
- Si sputter in PVD co-sputter/evaporation
- Si sputter in Alcatel
Comparison of the methods for deposition of Silicon
Sputter (PVD co-sputter/evaporation) | 4" and 6" Furnace PolySi (Furnace LPCVD PolySi) | Sputter (Wordentec) | Sputter (IBE/IBSD Ionfab 300) | Sputter (Alcatel) | |
---|---|---|---|---|---|
General description | Sputter deposition of Si | LPCVD (low pressure cheimical vapour deposition) of polysilicon | Sputter deposition of Si. | Ion beam sputter deposition of Si. | Sputter deposition of Si. Not recommended as first choice for Si deposition. |
Doping facility | None | Can be doped with boron or phosphorus during deposition | None | None | None |
Pre-clean | RF Ar clean | New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned | RF Ar clean | None | RF Ar clean |
Layer thickness | 10Å to about 3000Å | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. | 10Å to about 3000Å | No defined limits | 10Å to 2000Å |
Deposition rate | Dependent on process parameters, but in the order of 1 Å/s. See more here |
|
In the order of 1 Å/s, but dependendt on process parameters. See more here. |
About 6-8 nm/min. See more here. | 2Å/s to 8Å/s (see below). |
Process temperature | Option: heating wafer up to 400 deg C | 560 oC (amorph) and 620 oC (poly) | ? | Platen: 5-60 oC | ? |
Step coverage | . | Good | . | Not known | Poor |
Adhesion | . | Good for fused silica, silicon oxide, silicon nitride, silicon | . | Not tested | Bad for pyrex, for other materials we do not know |
Batch size |
|
|
|
|
|
Allowed substrates |
|
|
|
|
|
Allowed material |
|
Only those above (under allowed substrates). |
|
|
|
Comment | The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD. | This process is not running really stable nowadays. |