Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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| Sputter deposition of Si | | Sputter deposition of Si | ||
| | |LPCVD (low pressure cheimical vapour deposition) of polysilicon | ||
| Sputter deposition of Si. | | Sputter deposition of Si. | ||
| Line 45: | Line 45: | ||
! Doping facility | ! Doping facility | ||
|None | |None | ||
|Can be doped during deposition | |Can be doped with boron or phosphorus during deposition | ||
| None | |None | ||
|None | |None | ||
|None | |None | ||
| Line 56: | Line 56: | ||
! Pre-clean | ! Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
| | |New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned | ||
|RF Ar clean | |RF Ar clean | ||
|None | |None | ||