Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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Revision as of 09:05, 2 April 2014
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PolySilicon can be deposited in several Danchip tools. Either it can be sputtered or be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methods:
Deposition of PolySilicon using LPCVD
Deposition of Silicon using sputter deposition technique
Comparison of the methods for deposition of Silicon
Sputter (PVD co-sputter/evaporation) | Furnace PolySi (Furnace LPCVD pSi) | Sputter (Wordentec) | Sputter (IBE/IBSD Ionfab 300) | Sputter (Alcatel) | |
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General description | Sputter deposition of Si | Sputter deposition of Si. | Sputter deposition of Si. Not recommended as first choice for Si deposition. | ||
Doping facility | None | Can be doped during deposition with Boron and/or Phosphorous | None | None | None
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Pre-clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. | RF Ar clean | None | RF Ar clean |
Layer thickness | 10Å to about 3000Å | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. | 10Å to about 3000Å | No defined limits | 10Å to 2000Å |
Deposition rate | Dependent on process parameters, but in the order of 1 Å/s. See more here |
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In the order of 1 Å/s, but dependendt on process parameters. See more here. |
About 6-8 nm/min. See more here. | 2Å/s to 8Å/s (see below). |
Process temperature | Option: heating wafer up to 400 deg C | 560 oC (amorph) and 620 oC (poly) | ? | Platen: 5-60 oC | ? |
Step coverage | . | Good | . | Not known | Poor |
Adhesion | . | Good for fused silica, silicon oxide, silicon nitride, silicon | . | Not tested | Bad for pyrex, for other materials we do not know |
Batch size |
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Allowed substrates |
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Fused silica, Silicon, oxide, nitride |
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Allowed material |
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Comment | The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD. | This process is not running really stable nowadays. |