Specific Process Knowledge/Bonding: Difference between revisions

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![[/Eutectic bonding|Eutectic bonding]]

![[/Fusion bonding|Fusion bonding]]

![[/Anodic bonding|Anodic bonding]]

 

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!General description

|For bonding two substrates by use of an interphase that makes an eutecticum.  

|For bonding two identical materials.

|For bonding Si and Glass.  

 

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!Bonding temperature

|Depending on the eutecticum 310°C to 400°C.  

|Depending on defects 50°C to 400°C.  

|Depending on the voltage 300°C to 500°C Standard is 400°C.  

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!Annealing temperature

|No annealing  

|1000°C in the bond furnace C3.  

|No annealing

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!Materials possible to bond

|Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni  

|Si/Si, SiO2/SiO2

|Si/Pyrex (glass)  

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!Substrate size

|Up to 6" (aligning only possible for 4" and 6")  

|Up to 6" (aligning only possible for 4" and 6")  

|Up to 6" (aligning only possible for 4" and 6")   

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!Cleaning

|Cleaning by N2.  

|Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].

|Cleaning by N2.   

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!IR alignment

|Double side polished wafers.

|Double side polished wafers.

|Not relevant.