Specific Process Knowledge/Lithography/Baking: Difference between revisions
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==90 C oven== | ==90 C oven== | ||
[[Image:Oven_90_degrees_cr3.jpg| | [[Image:Oven_90_degrees_cr3.jpg|300x300px|thumb|Oven 90 °C: positioned in C-1]] | ||
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min. | The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min. | ||
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==120 C oven== | ==120 C oven== | ||
[[Image:Oven_120_degrees_cr3.jpg| | [[Image:Oven_120_degrees_cr3.jpg|300x300px|thumb|Oven 120 °C: positioned in C-1]] | ||
120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min. | 120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min. | ||
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==250 C oven for pretreatment== | ==250 C oven for pretreatment== | ||
[[Image:Oven_250_degrees__for_pretreatment_cr3.jpg| | [[Image:Oven_250_degrees__for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250 °C for pretreatment: positioned in C-1]] | ||
The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap. | The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap. | ||
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==250 C oven for burning resist== | ==250 C oven for burning resist== | ||
[[Image:Oven_250_degrees_for_burning_resist_cr3.jpg| | [[Image:Oven_250_degrees_for_burning_resist_cr3.jpg|300x300px|thumb|Oven 250 °C for burning resist: positioned in C-1]] | ||
This oven is used for "burning" the resist, therefore not considered clean. | This oven is used for "burning" the resist, therefore not considered clean. | ||
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