Specific Process Knowledge/Lithography/Baking: Difference between revisions
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==90 C oven== | ==90 C oven== | ||
[[Image:Oven_90_degrees_cr3.jpg| | [[Image:Oven_90_degrees_cr3.jpg|300x300px|thumb|Oven 90 °C: positioned in C-1]] | ||
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min. | The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min. | ||
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==120 C oven== | ==120 C oven== | ||
[[Image:Oven_120_degrees_cr3.jpg| | [[Image:Oven_120_degrees_cr3.jpg|300x300px|thumb|Oven 120 °C: positioned in C-1]] | ||
120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min. | 120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min. | ||
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==250 C oven for pretreatment== | ==250 C oven for pretreatment== | ||
[[Image:Oven_250_degrees__for_pretreatment_cr3.jpg| | [[Image:Oven_250_degrees__for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250 °C for pretreatment: positioned in C-1]] | ||
The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap. | The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap. | ||
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==250 C oven for burning resist== | ==250 C oven for burning resist== | ||
[[Image:Oven_250_degrees_for_burning_resist_cr3.jpg| | [[Image:Oven_250_degrees_for_burning_resist_cr3.jpg|300x300px|thumb|Oven 250 °C for burning resist: positioned in C-1]] | ||
This oven is used for "burning" the resist, therefore not considered clean. | This oven is used for "burning" the resist, therefore not considered clean. | ||
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Revision as of 13:18, 27 March 2014
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Hotplates
90 C 4" hotplate
This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist.
110 C 4" hotplate
The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec.
SU8 hotplates
We have two dedicated SU-8 hotplates in C-1.
Users can control the ramp-time, the baking temperature, and the baking time.
The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)
Ovens
90 C oven
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
120 C oven
120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min.
250 C oven for pretreatment
The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap.
250 C oven for burning resist
This oven is used for "burning" the resist, therefore not considered clean.