Specific Process Knowledge/Lithography/Baking

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Hotplates

90 C 4" hotplate

Right: Hotplate 90 °C situated in C-1

This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist.

110 C 4" hotplate

Left: Hotplate 110 °C situated in C-1

The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec.

SU8 hotplates

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Ovens

90 C oven

Oven 90 °C: positioned in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

120 C oven

Oven 120 °C: positioned in C-1

120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min.

250 C oven for pretreatment

Oven 250 °C for pretreatment: positioned in C-1

The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap.

250 C oven for burning resist

Oven 250 °C for burning resist: positioned in C-1

This oven is used for "burning" the resist, therefore not considered clean.