Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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! | ! General description | ||
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! Doping facility | |||
|None | |||
|Can be doped during deposition with Boron and/or Phosphorous | |||
| None | |||
|None | |||
|None | |||
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! Pre-clean | ! Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
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! Layer thickness | ! Layer thickness | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
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! Deposition rate | ! Deposition rate | ||
|Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]] | |Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]] | ||
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! Process temperature | ! Process temperature | ||
| Option: heating wafer up to 400 deg C | | Option: heating wafer up to 400 deg C | ||
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! Step coverage | ! Step coverage | ||
|. | |. | ||
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! Adhesion | ! Adhesion | ||
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|Bad for pyrex, for other materials we do not know | |Bad for pyrex, for other materials we do not know | ||
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! Batch size | |||
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* 4x 6" wafers or | |||
* 4x 4" wafers or | |||
* 4x 2" wafers | |||
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*1-25 wafers of 4" | |||
*For other sizes ask the ThinFilm group | |||
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*24x 2" wafers or | |||
*6x 4" wafers or | |||
*6x 6" wafers | |||
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* Several small samples mounted with capton tape | |||
* 1x 50 mm wafer | |||
* 1x 100 mm wafer | |||
* 1x 150 mm wafer | |||
* 1x 200 mm wafer | |||
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*Up to 1x4" wafers | |||
*smaller pieces | |||
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* Metals | * Metals | ||
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! Comment | ! Comment | ||
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