Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions
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We have observed that using automatic developing we can decrease the exposure dose for resolve the 250nm pillors structures comparing to dose needed for resolve the line the same size. | We have observed that using automatic developing we can decrease the exposure dose for resolve the 250nm pillors structures comparing to dose needed for resolve the line the same size. | ||
[[Image:140_250_nm_tilt22.tif|300×300px|right|thumb|The SEM picture of 250nm pillors and lines. Exposure dose is 140 J/m2.]] | |||
== Equipment performance and process related parameters == | == Equipment performance and process related parameters == | ||