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Specific Process Knowledge/Bonding: Difference between revisions

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*[[/Fusion bonding|Fusion bonding]]
*[[/Fusion bonding|Fusion bonding]]
*[[/Anodic bonding|Anodic bonding]]
*[[/Anodic bonding|Anodic bonding]]
== Comparing the three bonding methods in the EVG NIL ==
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|style="background:WhiteSmoke; color:black"|<b>[[/Eutectic bonding|Eutectic bonding]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[/Fusion bonding|Fusion bonding]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[/Anodic bonding|Anodic bonding]]</b>
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!style="background:silver; width:100px; color:black;" align="center"|General description
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For bonding two substrates by use of an interphase that makes an eutecticum.
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For bonding two identical materials.
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For bonding Si and Glass.
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!style="background:silver; color:black" align="center" valign="center"|Bonding temperature
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Depending on the eutecticum 310°C to 400°C.
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Depending on defects 50°C to 400°C.
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Depending on the voltage 300°C to 500°C Standard is 400°C.
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!style="background:silver; color:black" align="center" valign="center"|Annealing temperature
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No annealing
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1000°C in the bond furnace C3.
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No annealing
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!style="background:silver; color:black" align="center" valign="center"|Materials possible to bond
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Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni
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Si/Si, SiO2/SiO2
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Si/Pyrex (glass)
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!style="background:silver; color:black" align="center" valign="center"|Substrate size
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Up to 6" (aligning only possible for 4" and 6")
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Up to 6" (aligning only possible for 4" and 6")
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Up to 6" (aligning only possible for 4" and 6") 
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!style="background:silver; color:black" align="center" valign="center"|Cleaning
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Cleaning by N2.
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Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
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Cleaning by N2. 
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!style="background:silver; color:black" align="center" valign="center"|IR alignment
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Double side polished wafers.
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Double side polished wafers.
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Not relevant. 
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