Specific Process Knowledge/Bonding: Difference between revisions
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== Choose equipment == | |||
*[[/EVG NIL|EVG NIL]] | |||
*[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]] | |||
== Choose equipment == | == Choose equipment == | ||
*[[/EVG NIL|EVG NIL]] | *[[/EVG NIL|EVG NIL]] | ||
*[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]] | *[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]] | ||
Revision as of 09:16, 26 March 2014
Choose bonding method
Comparison table for 3 bonding methods in EVG NIL
Choose equipment
Choose equipment
| Eutectic bonding | Fusion bonding | Anodic bonding | |
| General description |
For bonding two substrates by use of an interphase that makes an eutecticum. |
For bonding two identical materials. |
For bonding Si and Glass. |
| Bonding temperature |
Depending on the eutecticum 310°C to 400°C. |
Depending on defects 50°C to 400°C. |
Depending on the voltage 300°C to 500°C Standard is 400°C. |
| Annealing temperature |
No annealing |
1000°C in the bond furnace C3. |
No annealing |
| Materials possible to bond |
Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni |
Si/Si, SiO2/SiO2 |
Si/Pyrex (glass) |
| Substrate size |
Up to 6" (aligning only possible for 4" and 6") |
Up to 6" (aligning only possible for 4" and 6") |
Up to 6" (aligning only possible for 4" and 6") |
| Cleaning |
Cleaning by N2. |
Wet chemical cleaning, IMEC. |
Cleaning by N2. |
| IR alignment |
Double side polished wafers. |
Double side polished wafers. |
Not relevant. |