Specific Process Knowledge/Bonding: Difference between revisions

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*[[/Anodic bonding|Anodic bonding]]
*[[/Anodic bonding|Anodic bonding]]


===Comparing the three bonding methods in the EVG NIL===
==Comparison table for 3 bonding methods in EVG NIL==
{| border="2" cellspacing="0" cellpadding="4" align="center"
!.
![[/Eutectic bonding|Eutectic bonding]]
![[/Fusion bonding|Fusion bonding]]
![[/Anodic bonding|Anodic bonding]]
|- valign="top"
|'''General description'''
|For bonding two substrates by use of an interphase that makes an eutecticum.
|For bonding two identical materials. 
|For bonding Si and Glass.
|-valign="top"
|'''Bonding temperature'''
|Depending on the eutecticum 310°C  to 400°C .
|Depending on defects 50°C  to 400°C .
|Depending on the voltage 300°C to 500°C  Standard is 400°C .
|-valign="top"
|'''Annnealing temperature'''
|No annealing
|1000°C  in the bond furnace C3
|No annealing
|-valign="top"
|'''Materials possible to bond'''
|Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni
|Si/Si, SiO<math>_2</math>/SiO<math>_2</math>
|Si/Pyrex (glass)
|-valign="top"
|'''Substrate size'''
|Up to 6" (aligning only possible for 4" and 6")
|Up to 6" (aligning only possible for 4" and 6")
|Up to 6" (aligning only possible for 4" and 6")
|-valign="top"
|'''Cleaning'''
|Cleaning by N2.
|Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
|Cleaning by N2.
|-valign="top"
|'''IR alignment'''
|Double side polished wafers.
|Double side polished wafers.
|Not relevant.


|-  
{| border="2" cellspacing="0" cellpadding="2"
|}
 
!colspan="1" border="none" style="background:silver; color:black;" align="center"|
|style="background:WhiteSmoke; color:black"|<b>[[/Eutectic bonding|Eutectic bonding]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[/Fusion bonding|Fusion bonding]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[/Anodic bonding|Anodic bonding]]</b>
|-
!style="background:silver; width:100px; color:black;" align="center"|General description
|style="background:WhiteSmoke; color:black"|
For bonding two substrates by use of an interphase that makes an eutecticum.
|style="background:WhiteSmoke; color:black"|
For bonding two identical materials.
|style="background:WhiteSmoke; color:black"|
For bonding Si and Glass.
|-
!style="background:silver; color:black" align="center" valign="center"|Bonding temperature
|style="background:WhiteSmoke; color:black"|
Depending on the eutecticum 310°C to 400°C.
|style="background:WhiteSmoke; color:black"|
Depending on defects 50°C to 400°C.
|style="background:WhiteSmoke; color:black"|
Depending on the voltage 300°C to 500°C Standard is 400°C.
|-
 
!style="background:silver; color:black" align="center" valign="center"|Annealing temperature
|style="background:WhiteSmoke; color:black"|
No annealing
|style="background:WhiteSmoke; color:black"|
1000°C in the bond furnace C3.
|style="background:WhiteSmoke; color:black"|
No annealing
|-
 
!style="background:silver; color:black" align="center" valign="center"|Materials possible to bond
|style="background:WhiteSmoke; color:black"|
Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni
|style="background:WhiteSmoke; color:black"|
Si/Si, SiO2/SiO2
|style="background:WhiteSmoke; color:black"|
Si/Pyrex (glass)
|-
 
!style="background:silver; color:black" align="center" valign="center"|Substrate size
|style="background:WhiteSmoke; color:black"|
Up to 6" (aligning only possible for 4" and 6")
|style="background:WhiteSmoke; color:black"|
Up to 6" (aligning only possible for 4" and 6")
|style="background:WhiteSmoke; color:black"|
Up to 6" (aligning only possible for 4" and 6") 
|-
 
!style="background:silver; color:black" align="center" valign="center"|Cleaning
|style="background:WhiteSmoke; color:black"|
Cleaning by N2.
|style="background:WhiteSmoke; color:black"|
Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
|style="background:WhiteSmoke; color:black"|
Cleaning by N2. 
|-
 
!style="background:silver; color:black" align="center" valign="center"|IR alignment
|style="background:WhiteSmoke; color:black"|
Double side polished wafers.
|style="background:WhiteSmoke; color:black"|
Double side polished wafers.
|style="background:WhiteSmoke; color:black"|
Not relevant. 
|-
 
<br clear="all" />


== Choose equipment ==
== Choose equipment ==
*[[/EVG NIL|EVG NIL]]
*[[/EVG NIL|EVG NIL]]
*[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]]
*[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]]

Revision as of 09:15, 26 March 2014

Choose bonding method

Comparison table for 3 bonding methods in EVG NIL


Choose equipment

Eutectic bonding Fusion bonding Anodic bonding
General description

For bonding two substrates by use of an interphase that makes an eutecticum.

For bonding two identical materials.

For bonding Si and Glass.

Bonding temperature

Depending on the eutecticum 310°C to 400°C.

Depending on defects 50°C to 400°C.

Depending on the voltage 300°C to 500°C Standard is 400°C.

Annealing temperature

No annealing

1000°C in the bond furnace C3.

No annealing

Materials possible to bond

Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni

Si/Si, SiO2/SiO2

Si/Pyrex (glass)

Substrate size

Up to 6" (aligning only possible for 4" and 6")

Up to 6" (aligning only possible for 4" and 6")

Up to 6" (aligning only possible for 4" and 6")

Cleaning

Cleaning by N2.

Wet chemical cleaning, IMEC.

Cleaning by N2.

IR alignment

Double side polished wafers.

Double side polished wafers.

Not relevant.

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