Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions

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! Batch size
! General description
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| E-beam evaporation of W
*Up to 1x4" wafers
*smaller pieces
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! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|2Å/s to 15Å/s
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! Batch size
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*Up to 1x4" wafers
*smaller pieces
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! Allowed materials
! Allowed materials


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* Metals  
* Metals  


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! Comments
! Comments
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Revision as of 16:17, 25 March 2014

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Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel)
General description E-beam evaporation of W
Pre-clean RF Ar clean
Layer thickness 10Å to 5000Å*
Deposition rate 2Å/s to 15Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comments

* For thicknesses above 200 nm permission is required