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Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,528 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,528 edits
Line 38: Line 38:
|[[media:AZ5214E.pdf‎|AZ5214E.pdf‎]]
|[[media:AZ5214E.pdf‎|AZ5214E.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]], [[Specific_Process_Knowledge/Lithography/Coaters#III-V Spinner|III-V Spinner]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]], [[Specific_Process_Knowledge/Lithography/Coaters#III-V Spinner|III-V Spinner]]
|...
|Positive process:
 
23-33 mJ/cm2 per µm resist for i-line.
 
½ dose for broadband exposure.  
 
Reverse process:
 
10.5 mJ/cm2 per µm resist for i-line, followed by 210 mJ/cm2 flood exposure after reversal bake.
 
1/2 dose for broadband exposure.
|AZ 351B developer
|AZ 351B developer
|DI water
|DI water
Line 54: Line 64:
|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|28 mJ/cm2 per µm resist for i-line, possibly increasing for increasing thickness.
|28 mJ/cm2 per µm resist for i-line, probably increasing with increasing thickness.


Multiple exposure recommended.
Multiple exposure recommended.
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