Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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|[[media:AZ5214E.pdf‎|AZ5214E.pdf‎]]
|[[media:AZ5214E.pdf‎|AZ5214E.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]], [[Specific_Process_Knowledge/Lithography/Coaters#III-V Spinner|III-V Spinner]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]], [[Specific_Process_Knowledge/Lithography/Coaters#III-V Spinner|III-V Spinner]]
|...
|Positive process:
 
23-33 mJ/cm2 per µm resist for i-line.
 
½ dose for broadband exposure.  
 
Reverse process:
 
10.5 mJ/cm2 per µm resist for i-line, followed by 210 mJ/cm2 flood exposure after reversal bake.
 
1/2 dose for broadband exposure.
|AZ 351B developer
|AZ 351B developer
|DI water
|DI water
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|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|28 mJ/cm2 per µm resist for i-line, possibly increasing for increasing thickness.
|28 mJ/cm2 per µm resist for i-line, probably increasing with increasing thickness.


Multiple exposure recommended.
Multiple exposure recommended.

Revision as of 14:29, 25 March 2014

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UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.



Resist Overview

Resist Polarity Manufacturer Comments Technical reports Spin Coating Exposure dose Developer Rinse Remover Process flows (in docx-format)
AZ 5214E Positive but can be reversed AZ Electronic Materials Can be used for both positive and reverse processes with resist thickness between 1 to 4um. AZ5214E.pdf‎ SSE, KS Spinner, III-V Spinner Positive process:

23-33 mJ/cm2 per µm resist for i-line.

½ dose for broadband exposure.

Reverse process:

10.5 mJ/cm2 per µm resist for i-line, followed by 210 mJ/cm2 flood exposure after reversal bake.

1/2 dose for broadband exposure.

AZ 351B developer DI water Acetone

Process_Flow_AZ5214_pos.docx‎ Process_Flow_AZ5214_rev.docx‎

AZ 4562 Positive AZ Electronic Materials For process with resist thickness between 6 and 25um. AZ4500.pdf‎ SSE, KS Spinner 28 mJ/cm2 per µm resist for i-line, probably increasing with increasing thickness.

Multiple exposure recommended.

1/2 dose for broadband exposure.

AZ 351B developer DI water Acetone Process_Flow_thick_AZ4562.docx‎
AZ MiR 701 Positive AZ Electronic Materials High selectivity for dry etch. AZ_MiR_701.pdf‎ Spin Track 1 + 2 Preliminary results:

105 mJ/cm2 per µm resist for i-line.

1/5 dose for broadband exposure.

AZ 726 MIF developer DI water Remover 1165 Process_Flow_AZ_MiR701.docx‎
AZ nLOF 2020 Negative AZ Electronic Materials AZ_nLOF_2020.pdf‎ Spin Track 1 + 2 <30 mJ/cm2 per µm resist for i-line, decreasing with increasing thickness.

Same dose for broadband exposure.

AZ 726 MIF developer DI water Remover 1165 Process_Flow_AZ_nLOF_2020.docx‎


SU-8 Negative Microchem SU-8_DataSheet_2005.pdf‎, SU-8_DataSheet_2075.pdf‎ KS Spinner Thickness and process dependent. PGMEA, mr-Dev 600 developer IPA Plasma ashing can remove crosslinked SU8. Process_Flow_SU8_70um.docx‎




UV Lithography Equipment


Pretreatment

Coaters

UV Exposure

Baking

Development

Strip

Lift-off

Wafer Cleaning