Specific Process Knowledge/Lithography/Baking: Difference between revisions
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==90 C 4" hotplate== | ==90 C 4" hotplate== | ||
[[Image: | [[Image:Hotplates.jpg|200x200px|thumb|Right: Hotplate 90 °C situated in C-1]] | ||
This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist. | This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist. | ||
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==110 C 4" hotplate== | ==110 C 4" hotplate== | ||
[[Image: | [[Image:Hotplates.jpg|200x200px|thumb|Left: Hotplate 110 °C situated in C-1]] | ||
The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec. | The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec. | ||
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