Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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*TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created. | *TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created. | ||
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*Reactive sputtering of Ti target in Ar/O2 (10% O2) plasma. | *Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma. | ||
* RF sputtering of TiO2 target | *RF sputtering of TiO2 target | ||
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!Deposition rate | !Deposition rate | ||
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*3.0-3.5nm/min | *3.0-3.5nm/min (reactive DC sputtering) | ||
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*3 - 5 nm/min | *3 - 5 nm/min (RF sputtering) | ||
*0.3 - 0.5nm/min | *0.3 - 0.5nm/min | ||
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