Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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*TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created. | *TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created. | ||
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*Reactive sputtering of Ti target in Ar/O2 (10% O2) plasma. | |||
* RF sputtering of TiO2 target | |||
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*Can probably be varied (sputter target: Ti, O2 added during deposition) | *Can probably be varied (sputter target: Ti, O2 added during deposition) | ||
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* | *unknown | ||
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*3.0-3.5nm/min | *3.0-3.5nm/min | ||
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* | *3 - 5 nm/min | ||
*0.3 - 0.5nm/min | |||
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*Not Known | *Not Known | ||
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* | *Not Known | ||
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*Expected to be below 100<sup>o</sup>C | *Expected to be below 100<sup>o</sup>C | ||
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* | *Done at RT. There is a possibility to run at higher temperatures | ||
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*Smaller pieces can be mounted with capton tape | *Smaller pieces can be mounted with capton tape | ||
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* | *several small samples | ||
* | *several 50 mm wafers (Ø150mm carrier) | ||
* | *1x 100 mm wafers | ||
* | *1x 150 mm wafers | ||
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*not Pb and very poisonous materials | *not Pb and very poisonous materials | ||
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* | *Almost any materials | ||
* | *Pb and poisonous materials only after special agreement | ||
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Revision as of 14:13, 21 March 2014
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Deposition of Titanium Oxide
Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is IBE/IBSD Ionfab300. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.
Comparison of the methods for deposition of Titanium Oxide
Sputter technique using IBE/IBSD Ionfab300 | Sputter System Lesker | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on TiO2 |
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Substrate size |
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Allowed materials |
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