Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide

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Deposition of Titanium Oxide

Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is IBE/IBSD Ionfab300. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.

• TiO2 made on IBE/IBSD Ionfab300

Comparison of the methods for deposition of Titanium Oxide

	Sputter technique using IBE/IBSD Ionfab300	Sputter System Lesker
Generel description	TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.	Generel description - method 2
Stoichiometry	Can probably be varied (sputter target: Ti, O2 added during deposition)
Film Thickness	~10nm - ~0.5µm(>2h)	Thin layers
Deposition rate	3.0-3.5nm/min
Step coverage	Not Known
Process Temperature	Expected to be below 100oC
More info on TiO2	TiO2 made on IBE/IBSD Ionfab300
Substrate size	1 50mm wafer 1 100mm wafer 1 150mm wafer 1 200mm wafer Smaller pieces can be mounted with capton tape	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers
Allowed materials	Almost any materials not Pb and very poisonous materials	Allowed material 1 Allowed material 2 Allowed material 3