Specific Process Knowledge/Thin film deposition/Deposition of Silicon

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PolySilicon can be deposited in several Danchip tools. Either it can be sputtered or be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methods:

	Sputter (PVD co-sputter/evaporation)	Furnace PolySi (Furnace LPCVD pSi)	Sputter (Wordentec)	Sputter (IBE/IBSD Ionfab 300)	Sputter (Alcatel)
Batch size	4x 6" wafers or 4x 4" wafers or 4x 2" wafers	1-25 wafers of 4" For other sizes ask the ThinFilm group	24x 2" wafers or 6x 4" wafers or 6x 6" wafers	Several small samples mounted with capton tape 1x 50 mm wafer 1x 100 mm wafer 1x 150 mm wafer 1x 200 mm wafer	Up to 1x4" wafers smaller pieces
Pre-clean	RF Ar clean	RCA clean for wafers that are not fresh form the box.	RF Ar clean	None	RF Ar clean
Layer thickness	10Å to about 3000Å	~50Å to 2µm, if thicker layers are needed please ask the furnace team.	10Å to about 3000Å	No defined limits	10Å to 2000Å
Deposition rate	Dependent on process parameters, but in the order of 1 Å/s. See more here	undoped, boron doped:~100Å/min Phospher doped:~20Å/min	In the order of 1 Å/s, but dependendt on process parameters. See more here.	About 6-8 nm/min. See more here.	2Å/s to 8Å/s (see below).
Process temperature	Option: heating wafer up to 400 deg C	560 oC (amorph) and 620 oC (poly)	?	Platen: 5-60 oC	?
Step coverage	.	Good	.	Not known	Poor
Adhesion	.	Good for fused silica, silicon oxide, silicon nitride, silicon	.	Not tested	Bad for pyrex, for other materials we do not know
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers	Fused silica, Silicon, oxide, nitride	Silicon wafers Quartz wafers Pyrex wafers	Same materials as on the allowed materials below	Silicon wafers Quartz wafers Pyrex wafers
Allowed material	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Any metals		Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon, silicon oxides, silicon nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Doping facility	None	Can be doped during deposition with Boron and/or Phosphorous	None	None	None
Comment				The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD.	This process is not running really stable nowadays.

Sputtered Silicon in the Alcatel

The parameter(s) changed	New value(s)	Deposition rate
Standard parameters	None
Power	400W	3.8 Å/s

Sputtered Silicon in the PVD co-sputter/evaporation

See this page: Si sputter in PVD co-sputter/evaporation

Sputtered Silicon in Wordentec

See this page: Si sputter in Wordentec