Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions

@@ Line 68: / Line 68: @@
 Etch source:
 *Ar: 0-40 sccm
-*O<math>_2</math>: 0-100 sccm
+*O<sub>2</sub>: 0-100 sccm
-*CHF<math>_3</math>: 0-100 sccm
+*CHF<sub>3</sub>: 0-100 sccm
-*Cl<math>_2</math>: 0-30 sccm
+*Cl<sub>2</sub>: 0-30 sccm
-*N<math>_2</math>: 0-1000 sccm
+*N<sub>2</sub>: 0-1000 sccm
 Deposition source:
 *Ar: 0-40 sccm
-*O<math>_2</math>: 0-100 sccm
+*O<sub>2</sub>: 0-100 sccm
 |-
 |style="background:LightGrey; color:black"|Chamber temperature