Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions
| Line 63: | Line 63: | ||
*Typical within +-2% | *Typical within +-2% | ||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan=" | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameters | ||
|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
| Line 75: | Line 75: | ||
*Ar: 0-40 sccm | *Ar: 0-40 sccm | ||
*O<math>_2</math>: 0-100 sccm | *O<math>_2</math>: 0-100 sccm | ||
|- | |||
|style="background:LightGrey; color:black"|Chamber temperature | |||
|style="background:WhiteSmoke; color:black"| | |||
*0-60 degrees Celcius | |||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||