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Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,331 edits
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|Oxidation of gate-oxide and other very clean oxides.
|Oxidation of gate-oxide and other very clean oxides.
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace (A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace (A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
|Oxidation of 4" and 6" wafers. Oxidation of new wafer with out RCA cleaning. Oxidation of wafers from the LPCVD furnaces and PECVD2.  
|Oxidation of 4" and 6" wafers. Oxidation of new wafers without RCA cleaning. Oxidation of wafers from the LPCVD furnaces and PECVD2.  
|Oxidation of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Oxidation of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Oxidation of very thick oxides, thickness higher than 4 µm.
|Oxidation of very thick oxides, thickness higher than 4 µm.
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
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*700 <sup>o</sup>C - 1100 <sup>o</sup>C
*900 <sup>o</sup>C - 1100 <sup>o</sup>C
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*550 <sup>o</sup>C for aluminium
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*1075 <sup>o</sup>C
*1075 <sup>o</sup>C
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Including one test wafer
Including one test wafer
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*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
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Including one test wafer
Including one test wafer
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*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
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!'''Allowed materials'''
!'''Allowed materials'''
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All wafers have to be RCA cleaned.
All wafers have to be RCA cleaned, except for boron pre-doped wafers from the same furnace.
Except for Boron pre-dep wafer from furnace A1.
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All wafers have to be RCA cleaned.  
All wafers have to be RCA cleaned.  
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All wafers have to be RCA cleaned.
All wafers have to be RCA cleaned, except for phosphorous pre-doped wafers from furnace A4.
Except for Phosphorous pre-dep wafers from furnace A4.
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All processed wafers have to be RCA cleaned.
All processed wafers have to be RCA cleaned, except for wafers from LPCVD furnaces and PECVD2.  
Except for wafers from LPCVD furnace and PECVD1.  
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All wafers have to be RCA cleaned.
All wafers have to be RCA cleaned, except for wafers from EVG-NIL, PECVD3 and wafers with aluminum.
Except for wafers from EVG-NIL, PECVD3 and wafer with aluminum.
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Only new wafers
Only new wafers
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Almost all meterials
Almost all materials, permission is needed
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