Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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==Comparison of the annealing furnaces==
==Comparison of the annealing furnaces==
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!General description
!General description
|Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1.  
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2.  
|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Annealing of almost materials on silicon wafer.
|Annealing of almost all materials on silicon wafers.
|Rapid thermal annealing
|Rapid thermal annealing
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!Substrate and Batch size  
!Substrate and Batch size  
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|
*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1-30 150 mm wafers
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|
*Small samples on carrier wafer, horizontal
*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
|
|
*Small samples on carrier wafer, horizontal
*Small samples on a carrier wafer, horizontal
*1-25 50 mm wafers
*1-25 50 mm wafers
*1-25 100 mm wafers, vertical and horizontal
*1-25 100 mm wafers, vertical and horizontal
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|
*Small samples on carrier wafer
*Small samples on a carrier wafer, horizontal
*One 100 mm wafers on carrier wafer
*One 100 mm wafers on a carrier wafer
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|-


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!'''Allowed materials'''
!'''Allowed materials'''
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*All processed wafers have to be RCA cleaned.
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD1.  
*Except for wafers from LPCVD furnaces and PECVD1.  
|
|
*All processed wafers have to be RCA cleaned.
*All processed wafers have to be RCA cleaned, except wafers from EVG-NIL, PECVD3 and wafers for annealing of aluminum.
*Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
|
|
*Almost all materials, permission is need.  
*Almost all materials, permission is needed.  
|
|
*III-V samples
*III-V samples
*Silicon wafer
*Silicon wafers
*Some metals
*Some metals
   
   

Revision as of 17:16, 19 March 2014

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Annealing

At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.

The recipes for oxidation are made so that a 20 minutes N2 annealing step is included after the oxiation step.

Comparison of the annealing furnaces

C1: Anneal Oxide

C3: Anneal Bond

Noble furnace

Jipelec RTP

General description Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2. Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. Annealing of almost all materials on silicon wafers. Rapid thermal annealing
Annealing gas
  • N2
  • N2
  • Ar
  • Wet annealing with bobbler (water steam + N2)
  • N2
  • Ar
  • N2
  • Vacuum is possible
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • 20 oC - 1000 oC
  • 20 oC - 1000 oC
  • Ramp up to 300 C/min
Substrate and Batch size
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers, vertical and horizontal
  • Small samples on a carrier wafer, horizontal
  • One 100 mm wafers on a carrier wafer
Allowed materials
  • All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD1.
  • All processed wafers have to be RCA cleaned, except wafers from EVG-NIL, PECVD3 and wafers for annealing of aluminum.
  • Almost all materials, permission is needed.
  • III-V samples
  • Silicon wafers
  • Some metals


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