Jump to content

Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

← Older editNewer edit →
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,331 edits
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,331 edits
Line 4: Line 4:
At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.  
At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.  


The reipes for oxidation are made so that a 20 minutes N<sub>2</sub> annealing step is included after the oxiation step and it is not normally necessary to make one more annealing of the wafers.
The recipes for oxidation are made so that a 20 minutes N<sub>2</sub> annealing step is included after the oxiation step.


==Comparison of the annealing furnaces==
==Comparison of the annealing furnaces==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Annealing"