Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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 ==Annealing==
-At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
+At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
-The furnace for oxidation are made so a 20 minutes N<sub>2</sub> annealing step is include and it is not normally necessary to make one more annealing of the wafers.
+The reipes for oxidation are made so that a 20 minutes N<sub>2</sub> annealing step is included after the oxiation step and it is not normally necessary to make one more annealing of the wafers.
 ==Comparison of the annealing furnaces==