Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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==Oxidation== | ==Oxidation== | ||
At Danchip we have seven furnaces for oxidation: A1, A2, A3, C1, C3, D1 and Nobel. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant. | At Danchip we have seven furnaces for oxidation: A1, A2, A3, C1, C3, D1 and Nobel. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant, however the oxidation rate is slow for dry oxide. | ||
If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | ||
*Dry oxidation is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A2, A3, C1, C3. | *Dry oxidation is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A2, A3, C1, C3. | ||