Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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 ==Annealing==
-At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
+At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
-*Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
+The oxidation furnace recipes are made so a 20 minutes N<sub>2</sub> annealing step is include and it is not necessary to make one more.
-*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3.
 ==Comparison of the annealing furnaces==