Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3. | *Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3. | ||
==Comparison of the annealing furnaces== | |||
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Revision as of 14:58, 19 March 2014
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Annealing
At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
- Anneal with N2 can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
- Wet anneal with H2O in a bubbler can be done in furnaces:C1 and C3.
Comparison of the annealing furnaces
General description | Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. | Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | Annealing of almost materials on silicon wafer. | Rapid thermal annealing |
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Annealing gas |
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Process temperature |
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Substrate and Batch size |
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Allowed materials |
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