Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

From LabAdviser
Mdyma (talk | contribs)
Mdyma (talk | contribs)
Line 11: Line 11:
*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3.
*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3.


==Comparison of the annealing furnaces==
{|border="1" cellspacing="1" cellpadding="4" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="4" style="text-align:left;"  
|-
|-

Revision as of 14:58, 19 March 2014

THIS PAGE IS UNDER CONSTRUCTION

Feedback to this page: click here

Annealing

At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.

  • Anneal with N2 can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
  • Wet anneal with H2O in a bubbler can be done in furnaces:C1 and C3.

Comparison of the annealing furnaces

C1: Anneal Oxide

C3: Anneal Bond

Noble furnace

Jipelec RTP

General description Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. Annealing of almost materials on silicon wafer. Rapid thermal annealing
Annealing gas
  • N2
  • N2
  • Ar
  • Wet annealing with bobbler (water steam + N2)
  • N2
  • Ar
  • N2
  • Vacuum is possible
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • 20 oC - 1000 oC
  • 20 oC - 1000 oC
  • Ramp up to 300 C/min
Substrate and Batch size
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers, vertical and horizontal
  • Small samples on carrier wafer
  • One 100 mm wafers on carrier wafer
Allowed materials
  • All processed wafers have to be RCA cleaned.
  • Except for wafers from LPCVD furnaces and PECVD1.
  • All processed wafers have to be RCA cleaned.
  • Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
  • Almost all materials, permission is need.
  • III-V samples
  • Silicon wafer
  • Some metals