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Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
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!
[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace| A1: Boron Drive-in]]
!
[[Specific_Process_Knowledge/Thermal_Process/C2_Gate_Oxide_furnace| A2: Gate Oxide]]
!
[[Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace| A3: Phosphorous Drive-in]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]]
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX| D1: APOX]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!General description
|Drive-in of boron deposited in the boron pre-dep furnace(A1) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.
|Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1.  
|Oxidation of gate-oxide and other especially clean oxides.
|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
|Annealing of almost materials on silicon wafer.
|Oxidation and annealing of 6" wafers. Oxidation of new wafer with out RCA cleaning. Annealing of wafers from the LPCVD furnaces and PECVD1.  
|Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Oxidation of very thick oxides, thickness higher than 4 µm.
|Oxidation and annealing of almost materials on silicon wafer.
|-
 
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|-style="background:LightGrey; color:black"
!Oxidation method
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*Dry: 5 SLM O<sub>2</sub>
*Wet: Torch
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*Dry: 5 SLM O<sub>2</sub>
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*Dry: 5 SLM O<sub>2</sub>
*Wet: Torch
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*Dry: 5 SLM O<sub>2</sub>
*Wet: Steamer
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*Dry: 5 SLM O<sub>2</sub>
*Wet: Bobbler
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*Dry: 5 SLM O<sub>2</sub>
*Wet: Bubbler
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*Dry: 5 SLM O<sub>2</sub>
*Wet: Bubbler
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|-style="background:WhiteSmoke; color:black"
!Annealing gas
!Annealing gas
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*N<sub>2</sub>
*Ar
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*N<sub>2</sub>
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*N<sub>2</sub>
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*N<sub>2</sub>
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*N<sub>2</sub>
*N<sub>2</sub>
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|
*N<sub>2</sub>
*N<sub>2</sub>
*Ar
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|
*N<sub>2</sub>
*N<sub>2</sub>
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Process temperatur
!Process temperature
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C
|
|
*700 <sup>o</sup>C - 1100 <sup>o</sup>C
*700 <sup>o</sup>C - 1100 <sup>o</sup>C
|
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
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*1075 <sup>o</sup>C
|
|
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
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|-style="background:WhiteSmoke; color:black"
!Substrate and Batch size  
!Substrate and Batch size  
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*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer
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*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer
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*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1-30 150 mm wafers
Including one test wafer
|
|
*Small samples on carrier wafer, horizontal
*Small samples on carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
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*1-150 100 mm wafers
|
|
*Small samples on carrier wafer, horizontal
*Small samples on carrier wafer, horizontal
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|-style="background:LightGrey; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|
All wafers have to be RCA cleaned.
Except for Boron pre-dep wafer from furnace A1.
|
All wafers have to be RCA cleaned.
|
All wafers have to be RCA cleaned.
Except for Phosphorous pre-dep wafers from furnace A4.
|
|
All processed wafers have to be RCA cleaned.  
All processed wafers have to be RCA cleaned.  
Except for wafers from LPCVD furnace and PECVD1.  
 
Except for wafers from LPCVD furnaces and PECVD1.  
|
|
All wafers have to be RCA cleaned.  
All wafers have to be RCA cleaned.
Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
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|
Only new wafers
Almost all materials, permission is need.
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Almost all meterials
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|-
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