Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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PolySilicon can be sputtered | PolySilicon can be deposited in several Danchip tools. Either it can be sputtered or be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methods: | ||
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ||
! Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD pSi]]) | ! Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD pSi]]) | ||
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
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*undoped, boron doped:~100Å/min | *undoped, boron doped:~100Å/min | ||
*Phospher doped:~20Å/min | *Phospher doped:~20Å/min | ||
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In the order of 1 Å/s, but dependendt on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | |||
| About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | | About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | ||
|2Å/s to | |2Å/s to 8Å/s (see below). | ||
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! Allowed substrates | ! Allowed substrates | ||
|Pyrex | | | ||
* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
|Fused silica, Silicon, oxide, nitride | |Fused silica, Silicon, oxide, nitride | ||
|Pyrex | | | ||
* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
|. | |. | ||
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* Any metals | * Any metals | ||
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* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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* Silicon, silicon oxides, silicon nitrides | |||
* Metals from the +list | |||
* Metals from the -list | |||
* Alloys from the above list | |||
* Stainless steel | |||
* Glass | |||
* III-V materials | |||
* Resists | |||
* Polymers | |||
* Capton tape | |||
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* Silicon oxide | * Silicon oxide | ||
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| | | The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD. | ||
| This process is not running really stable nowadays. | | This process is not running really stable nowadays. | ||
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== Sputtered Silicon in the Alcatel== | == Sputtered Silicon in the Alcatel== | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |||
!The parameter(s) changed | !The parameter(s) changed | ||
!New value(s) | !New value(s) | ||
!Deposition rate | !Deposition rate | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |||
|Standard parameters | |Standard parameters | ||
|None | |None | ||
| | | | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |||
|Power | |Power | ||
|400W | |400W | ||
Revision as of 13:29, 17 March 2014
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PolySilicon can be deposited in several Danchip tools. Either it can be sputtered or be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methods:
| Sputter (PVD co-sputter/evaporation) | Furnace PolySi (Furnace LPCVD pSi) | Sputter (Wordentec) | Sputter (IBE/IBSD Ionfab 300) | Sputter (Alcatel) | |
|---|---|---|---|---|---|
| Batch size |
|
|
|
|
|
| Pre-clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. | RF Ar clean | . | RF Ar clean |
| Layer thickness | 10Å to about 3000Å | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. | 10Å to about 3000Å | . | 10Å to 2000Å |
| Deposition rate | Dependent on process parameters, but in the order of 1 Å/s. See more here |
|
In the order of 1 Å/s, but dependendt on process parameters. See more here. |
About 6-8 nm/min. See more here. | 2Å/s to 8Å/s (see below). |
| Process temperature | Option: heating wafer up to 400 deg C | 560 oC (amorph) and 620 oC (poly) | ? | . | ? |
| Step coverage | . | Good | . | . | Poor |
| Adhesion | . | Good for fused silica, silicon oxide, silicon nitride, silicon | . | . | Bad for pyrex, for other materials we do not know |
| Allowed substrates |
|
Fused silica, Silicon, oxide, nitride |
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. |
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| Allowed material |
|
|
|
| |
| Doping facility | None | Can be doped during deposition with Boron and/or Phosphorous | None | . | None |
| Comment | The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD. | This process is not running really stable nowadays. |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |
Sputtered Silicon in the PVD co-sputter/evaporation
See this page: Si sputter in PVD co-sputter/evaporation
Sputtered Silicon in Wordentec
See this page: Si sputter in Wordentec