Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
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| Batch size | |-style="background:WhiteSmoke; color:black" | ||
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*Up to 1x4" wafers | *Up to 1x4" wafers | ||
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| Pre-clean | |-style="background:LightGrey; color:black" | ||
! Pre-clean | |||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
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| Layer thickness | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | |||
|10Å to 1µm | |10Å to 1µm | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
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| Deposition rate | |-style="background:LightGrey; color:black" | ||
! Deposition rate | |||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
|Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]] | |Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]] | ||
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|Process temperature | |-style="background:WhiteSmoke; color:black" | ||
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|? | |? | ||
| Option: heating wafer up to 400 deg C | | Option: heating wafer up to 400 deg C | ||
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|Step coverage | |-style="background:LightGrey; color:black" | ||
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|Poor | |Poor | ||
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|Adhesion | |||
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|Bad for pyrex, for other materials we do not know | |Bad for pyrex, for other materials we do not know | ||
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|Pyrex | ! Allowed substrates | ||
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* Silicon | |||
* Pyrex | |||
* Fused silica, , metals, oxide, nitride, blue tape | |||
|Pyrex, fused silica, silicon, metals, oxide, nitride | |Pyrex, fused silica, silicon, metals, oxide, nitride | ||
|Fused silica, Silicon, oxide, nitride | |Fused silica, Silicon, oxide, nitride | ||
|Pyrex, fused silica, silicon, metals, oxide, nitride | |Pyrex, fused silica, silicon, metals, oxide, nitride | ||
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|Doping facility | |-style="background:WhiteSmoke; color:black" | ||
! Allowed material | |||
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! Doping facility | |||
|None | |None | ||
|None | |None | ||
Revision as of 09:45, 17 March 2014
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PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:
| Sputter (Alcatel) | Sputter(PVD co-sputter/evaporation) | Furnace PolySi (Furnace LPCVD pSi) | Sputter (Wordentec) | Sputter (IBE/IBSD Ionfab 300) | |
|---|---|---|---|---|---|
| Batch size |
|
|
.
|
|
. |
| Pre-clean | RF Ar clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. | RF Ar clean | . |
| Layer thickness | 10Å to 1µm | 10Å to about 3000Å | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. | 10Å to about 3000Å | . |
| Deposition rate | 2Å/s to 15Å/s | Dependent on process parameters, but in the order of 1 Å/s. See more here |
|
.
Dependent on process parameters, but in the order of 1 Å/s. See more here. |
. |
| Process temperature | ? | Option: heating wafer up to 400 deg C | 560 oC (amorph) and 620 oC (poly) | ? | . |
| Step coverage | Poor | . | Good | . | . |
| Adhesion | Bad for pyrex, for other materials we do not know | . | Good for fused silica, silicon oxide, silicon nitride, silicon | . | . |
| Allowed substrates |
|
Pyrex, fused silica, silicon, metals, oxide, nitride | Fused silica, Silicon, oxide, nitride | Pyrex, fused silica, silicon, metals, oxide, nitride | . |
| Allowed material | |||||
| Doping facility | None | None | Can be doped during deposition with Boron and/or Phosphorous | None | . |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |
Sputtered Silicon in the PVD co-sputter/evaporation
See this page: Si sputter in PVD co-sputter/evaporation
Sputtered Silicon in Wordentec
See this page: Si sputter in Wordentec