Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

@@ Line 14: / Line 14: @@
 !
 ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
+! Thermal evaporation ([[Specific_Process_Knowledge/III-V_Process/thin_film_dep/physimeca|Physimeca]])
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Batch size
 |
-*24x2" wafers or
+*24x 2" wafers or
-*6x4" wafers or
+*6x 4" wafers or
-*6x6" wafers
+*6x 6" wafers
+|
+*1x 2" wafer or
+*1x 4" wafers or
+*Several smaller pieces
 |-
 |-style="background:LightGrey; color:black"
 ! Pre-clean
 |RF Ar clean
+| -
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Layer thickness
 |10Å to about 2000Å
+|10Å to about 3000Å
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
 |From 0.4 Å/s up to about ~2Å/s
+|From 5 Å/s up to 10/s
 |-
 |-style="background:WhiteSmoke; color:black"
-! Comment
-|Recommended for unexposed e-beam resist
-|-style="background:LightGrey; color:black"
 ! Allowed substrates
 |
@@ Line 43: / Line 50: @@
 * Quartz wafers
 * Pyrex wafers
+|
+* III-V materials
+* Silicon wafers
+* Quartz wafers
+* Pyrex wafers
+|-style="background:LightGrey; color:black"
-|-style="background:WhiteSmoke; color:black"
 !Allowed materials
@@ Line 55: / Line 67: @@
 * SU-8
 * Metals
+|
+* Silicon oxide
+* Silicon (oxy)nitride
+* Photoresist
+* PMMA
+* Mylar
+|-style="background:WhiteSmoke; color:black"
+! Comment
+|Recommended for unexposed e-beam resist
+|
 |}