Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions

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|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
|K<math>J</math>:H<math>_3</math>PO<math>_4</math>  1:2
|PES 77-19-04  
|PES 77-19-04  
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Revision as of 15:54, 17 January 2008

Etching of Gold

Etching of Gold is done wet at Danchip. We have two different solutions:

  1. KI:I:HO - 400g:100g:400ml?
  2. HNO:HCl - 1:3


Comparing the two solutions

Iodine based gold etch Aqua Regia (Kongevand)
General description

Etch of pure Gold

Etch of pure Gold

Chemical solution K:HPO 1:2 PES 77-19-04
Process temperature 50 oC 20 oC
Possible masking materials:

Photoresist (1.5 µm AZ5214E)

Photoresist (1.5 µm AZ5214E)

Etch rate

~100 nm/min (Pure Al)

~60(??) nm/min

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist