Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
Appearance
No edit summary |
|||
| Line 5: | Line 5: | ||
If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | ||
*Dry oxidation is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A2, A3, C1, C3. | *Dry oxidation is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A2, A3, C1, C3. | ||
*Wet oxidation is used up to 4 µm can be grown in furnace: A1, A3. | *Wet oxidation is used up to 4 µm can be grown in furnace: A1, A3, Nobel. | ||
*Very thick oxide >4 µm can be grown in D1. | *Very thick oxide >4 µm can be grown in D1, it is still a wet oxidation. | ||
The standard recipes, quality control limits and results for the Boron Drive-in and Phosphorus Drive-in furnaces can be found here: | The standard recipes, quality control limits and results for the Boron Drive-in and Phosphorus Drive-in furnaces can be found here: | ||